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triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet january 1, 2007 1 -25 -15 -5 5 15 25 35 12 13 14 15 16 17 18 19 frequency (ghz) s-parameters (db) 12-19 ghz vsat amplifier tga2508-scc key features ? frequency range: 12 - 19 ghz ? 30 db nominal gain ? 30 dbm nominal p1db @ 15 ghz ? 32 dbm nominal otoi ? bias conditions: 7 v, 433 ma ? 0.50 um 3mi phemt technology ? chip dimensions: 2.1 x 1.1 x 0.1 mm (0.083 x 0.118 x 0.004 in) primary applications ? vsat ground terminals ? point to point radio ? military ku band measured data bias conditions: vd = 7 v, id = 433 ma product description the triquint tga2508 is a compact medium power amplifier mmic for vsat applications. the part is designed using triquint?s 0.5 um power phemt production process. the tga2508 provides a nominal 30 db gain from 12-19 ghz, with output power @ 1db gain compression of 30 dbm. the mmic also provides 32 dbm output toi @ pin/tone = -10 dbm. the part is ideally suited for low cost emerging markets such as vsat ground terminals, point- to-point radio, military ku band applications. the tga2508 is 100% dc and rf tested on- wafer to ensure performance compliance. evaluation boards are available. 25 26 27 28 29 30 31 32 12 13 14 15 16 17 18 19 frequency (ghz) p1db & p2db (dbm) p2db p1db orl irl gain
triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet january 1, 2007 2 table i maximum ratings 1 / symbol parameter value notes v + positive supply voltage 8 v 2/ v - negative supply voltage range -2 to 0 v i + positive supply current (quiescent) 591 ma 2 / 3 / | i g | gate supply current 16 ma 3 / p in input continuous wave power 17 dbm p d power dissipation 5.6 w 2 / 4 / t ch operating channel temperature 150 0 c 5 / 6 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1 / these ratings represent the maximum operable values for this device. 2 / combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3 / total current for the entire mmic. 4/ when operated at this bias condition with a base plate temperature of 70 0 c, the median life is 1e+6 hrs. 5 / junction operating temperature will directly affect the device median time to failure (mttf). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6 / these ratings apply to each individual fet tga2508-scc table ii dc probe test (ta = 25 c 5 c) symbol parameter minimum maximum unit idss (q4) saturated drain current 50 350 ma gm (q4) transconductance 200 500 ms vp (q1, 2, 3, 4, 5) pinch-off voltage -1.3 -0.3 v bvgs (q4) breakdown voltage gate-source -30 -8 v bvgd (q1-5) breakdown voltage gate-drain -30 -11 v q1 is 240um fet, q2 is 420um fet, q3 is 800um fet, q4 & q5 are 1000um fets
triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet january 1, 2007 3 tga2508-scc table iii electrical characteristics (ta = 25 o c 5 o c) table iv thermal information parameter test conditions t ch ( o c) jc ( c/w) t m (hrs) jc thermal resistance (channel to backside of carrier) vd = 7 v i d = 433 ma pdiss = 3.031 w 105.92 11.85 6.4e+7 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. worst case c ondition with no rf applied, 100% of dc power is dissipated. parameter typical units frequency range 12 - 19 ghz drain voltage, vd 7 v drain current, id 433 ma small signal gain, s21 30 db input return loss, s11 17 db output return loss, s22 7 db output power @ 1db gain compression @ 15ghz, p1db 30 dbm output toi @ pin/tone = -10dbm 32 dbm temperature gain coefficient 0.06 db/ 0 c
triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet january 1, 2007 4 10 12 14 16 18 20 22 24 26 28 30 32 34 36 10 11 12 13 14 15 16 17 18 19 20 frequency (ghz) gain over temperature (db) tga2508-scc measured data bias conditions: vd = 7 v, id = 433 ma - 40 0 c + 25 0 c + 70 0 c 10 12 14 16 18 20 22 24 26 28 30 32 34 36 10 11 12 13 14 15 16 17 18 19 20 frequency (ghz) gain (db)
triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet january 1, 2007 5 tga2508-scc measured data bias conditions: vd = 7 v, id = 433 ma -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 10 11 12 13 14 15 16 17 18 19 20 frequency (ghz) input return loss (db) -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 10 11 12 13 14 15 16 17 18 19 20 frequency (ghz) output return loss (db)
triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet january 1, 2007 6 25 26 27 28 29 30 31 32 12 13 14 15 16 17 18 19 frequency (ghz) p2db over temperature (dbm) 25 26 27 28 29 30 31 32 12 13 14 15 16 17 18 19 frequency (ghz) output power @ 1db & 2db compression (dbm) measured data bias conditions: vd = 7 v, id = 433 ma p1db p2db tga2508-scc -40 0 c +25 0 c +70 0 c
triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet january 1, 2007 7 10 12 14 16 18 20 22 24 26 28 30 32 34 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 pin (dbm) pout (dbm) 400 425 450 475 500 525 550 575 600 625 650 675 700 id (ma) measured data bias conditions: vd = 7 v, id = 433 ma pout id tga2508-scc gain 10 12 14 16 18 20 22 24 26 28 30 32 34 12 13 14 15 16 17 18 19 frequency (ghz) pae (%) p2db p1db @ 15ghz frequency
triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet january 1, 2007 8 20 22 24 26 28 30 32 34 36 12 13 14 15 16 17 18 frequency (ghz) output toi @ pin/tone = -10dbm (dbm) measured data bias conditions: vd = 7 v, id = 433 ma tga2508-scc 0 5 10 15 20 25 30 35 40 45 50 55 11 13 15 17 19 21 23 25 27 output power/tone (dbm) imd3 (dbc) 13ghz 15ghz 17ghz @ 15ghz frequency
triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet january 1, 2007 9 mechanical drawing tga2508-scc gaas mmic devices are susceptible to damage from el ectrostatic discharge. pr oper precautions should be observed during handling, assembly and test. 1 2 3 4 5 6 0.599 (0.024) 0.120 (0.005) 0.145 (0.006) 1.982 (0.078) 2.108 (0.083) 0.119 (0.005) 0.536 (0.021) 0.970 (0.038 1.138 (0.045) 1.984 (0.078) 1.784 (0.070) 0.118 (0.005) 1.020 (0.040) units: millimeters (inches) thickness: 0.100 (0.004) chip edge to bond pad dimensions are shown to center of bond pad chip size tolerance: +/- 0.051 (0.002) bond pad #1: bond pad #2: bond pad #3: bond pad #4: bond pad #5: bond pad #6: (rf in) (vg) (rf out) (vd) 0.098 x 0.199 0.099 x 0.099 0.098 x 0.099 0.099 x 0.198 0.098 x 0.198 0.202 x 0.098 (0.004 x 0.008) (0.004 x 0.004) (0.004 x 0.004) (0.004 x 0.008) (0.004 x 0.008) (0.008 x 0.004) 0.801 (0.032) 0.738 (0.029) 0.333 (0.013) 0.396 (0.016) (dc gnd)* (dc gnd)* * note: rf gnd is back side of mmic.
triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet january 1, 2007 10 recommended chip assembly diagram tga2508-scc gaas mmic devices are susceptible to damage from electrostatic discharge. pr oper precautions should be observed during handling, assembly and test. vd vg rf in rf out 100pf 0.01uf 0.01uf 100pf
triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet january 1, 2007 11 assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. pr oper precautions should be observed during handling, assembly and test. tga2508-scc reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 0 c (30 seconds max). ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? maximum stage temperature is 200 0 c.

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